unit : inch (mm) ? by229b200 thru by229b800 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 1/2 pb free plating product by229b200 thru by229b800 pb 8.0 ampere surface mount d2pak pkg ultra fast recovery rectifiers features low forward voltage drop fast switching for high efficiency high current capability case: (surface mount to-220)to-263ab package high surge current capability weight: 2.03 grams approximately polarity: as marked on diodes body method 208 mounting position: any terminals: solderable per mil-std-202 mechanical data low reverse leakage current epoxy: ul 94v-0 rate flame retardant application switching mode power supply inverter/converter tv receiver,monitor/set top box note: (1) pulse test: 300 s pulse width, 1 % duty cycle electrical characteristics (t c = 25 c unless otherwise noted) maximum instantaneous forward voltage (1) f maximum dc reverse current at rated dc blocking voltage t j = 25 c t j = 125 c i r 10 250 a maximum reverse recovery time i f = 1.0 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t rr maximum recovered stored charge i f = 2.0 a, v r = 30 v, di/dt = 20 a/s q rr 700 nc thermal characteristics (t c = 25 c unless otherwise noted) typical thermal resistance from junction to case r jc 2.0 4.8 2.0 c/w typical thermal resistance from junction to air r ja 20 - 20 c/w maximum ratings (t c = 25 c unless otherwise noted) maximum recurrent peak reverse voltage v rrm 200 400 600 800 v maximum rms voltage v rms 140 280 420 560 v maximum dc blocking voltage v dc 200 400 600 800 v maximum average forward rectified current at t c = 100 c i f(av) 8.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 100 a maximum slope of reverse recovery current i f = 2.0 a, v r = 30 v, di/dt = 20 s di/dt 60 a/ s operating junction and storage temperature range t j , t stg - 40 to + 150 c isolation voltage (ito-220ac only) from terminal to heatsink t = 1 min v ac 1500 v BY229B-200 by229b-400 by229b-600 by229b-800 unit parameter symbol by229b200 by229b400 by229b600 by229b800 parameter test conditions symbol BY229B-200 by229b-400 by229b-600 by229b-800 unit by229b200 by229b400 by229b600 by229b800 parameter symbol by229x by229b unit by229 series series series by229 series with to-220ac(heatsink) pkg by229 series with ito-220ac(insulated) pkg by229b series with to-263ab(d2pa) pkg 50 ns 35 1.8 v 1.7 1.3 8.0 a v 0.98 to-263ab/d2pak-2l free datasheet http:///
ratings and characteristics curves (t a = 25 c unless otherwise noted) figure 1. forward current derating curve figure 2. maximum non-repetitive peak forward surge current figure 3. typical instantaneous forward characteristics 0 4 12 0 75 25 50 100 125 150 8 2 6 10 a v erage for w ard re ctified c u rrent (a) case am b ient temperat u re (c) resisti v e or ind u cti v e load 0 75 100 125 50 25 150 1 100 10 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t l = 75 c 8 .3 ms single half sine- w a v e 100 10 1 0.1 0.4 0.6 1.4 1.6 1. 8 2.0 0. 8 1.0 1.2 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 100 c t j = 150 c t j = 125 c t j = 25 c p u lse w idth = 300 s 1 % d u ty cycle figure 4. typical reverse leakage characteristics figure 5. typical junction capacitance 0.1 1 10 100 0.01 20 0 100 40 60 8 0 1000 t j = 100 c t j = 150 c t j = 125 c t j = 25 c percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse leakage c u rrent ( a) 1 100 100 10 10 re v erse v oltage ( v ) j u nction capacitance (pf) t j = 25 c f = 1.0 mhz v sig = 50 m v p-p ? by229b200 thru by229b800 ? 2006 thinki semiconductor co.,ltd. http://www.thinkisemi.com/ page 2/2 free datasheet http:///
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